I'm interested in your capabilities with respect to depositing 500nm of low-stress silicon nitride on a 4" silicon wafer that has been ALD coated in 30nm of aluminum oxide.
A semiconductor engineer requested the following quote:
I'm interested in your capabilities with respect to depositing 500nm of low-stress silicon nitride on a 4" silicon wafer that has been ALD coated in 30nm of aluminum oxide.
UniversityWafer, Inc. Quoted
Pls see below for the offer on film stack wafer
Depositing 500nm of low-stress silicon nitride on a 4" silicon wafer that has been ALD coated in 30nm of aluminum oxide.
Grade: Prime
Dopant: n-type, As
Orientation: <100>
Resistivity: 0.005 Ohm.cm
Diameter: 100mm
Thickness: 300um or 500um
Form: Single side polished
Quantity: 25
Reference #269176 for specs and pricing.
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Aluminum oxide is commonly used by materials engineers and electrical engineers in various industries. In particular, engineers involved in the development and manufacturing of semiconductors, electronic devices, and ceramic materials often work with aluminum oxide. Materials engineers may use aluminum oxide in the development of new materials or coatings, as well as in the selection and optimization of materials for specific applications. They may also be involved in the design and manufacturing of electronic components that utilize aluminum oxide as a dielectric material. Electrical engineers may use aluminum oxide in the design and testing of electronic circuits and devices. They may also be involved in the development of new manufacturing processes for the deposition of aluminum oxide as a dielectric layer in ICs. Other types of engineers may also use aluminum oxide depending on their specific industry or application. For example, mechanical engineers may use aluminum oxide in the design and testing of materials for high-temperature applications, while chemical engineers may use it in the development of catalysts or other chemical processes.
Aluminum oxide, also known as alumina, is a chemical compound made up of aluminum and oxygen. It has the chemical formula Al2O3 and is the most commonly occurring oxide of aluminum.
Aluminum oxide can be found in nature as the mineral corundum, which is the second hardest mineral after diamond. It is also a common component of the rock bauxite, which is the main ore of aluminum.
Aluminum oxide has a wide range of industrial applications due to its hardness, high melting point, and chemical stability. It is used as an abrasive, as a refractory material in high-temperature applications, as a catalyst, and as a filler in ceramics and other materials. It is also used in the production of aluminum metal and as a coating on other materials to improve their wear resistance and durability.
Aluminum oxide is commonly used in semiconductor fabrication as a dielectric material. In the manufacturing of integrated circuits (ICs), a thin layer of aluminum oxide is often deposited on the surface of the silicon wafer to act as an insulator between the conductive layers of the IC.
The aluminum oxide layer is usually formed by a process called chemical vapor deposition (CVD) or atomic layer deposition (ALD), in which a gas containing aluminum and oxygen is introduced into a chamber containing the silicon wafer. The gas then reacts on the surface of the wafer to deposit a thin layer of aluminum oxide.
The thickness of the aluminum oxide layer is carefully controlled to ensure proper insulation between the conductive layers of the IC. The layer is then patterned using lithography and etching techniques to create the desired circuitry.
Aluminum oxide is preferred as a dielectric material in semiconductor fabrication due to its high dielectric constant, low leakage current, and good thermal stability. It is also compatible with a wide range of other materials commonly used in IC manufacturing.
Aluminum oxide is commonly used as a dielectric material on a variety of substrates in the semiconductor industry. Some of the substrates that are commonly used in conjunction with aluminum oxide include:
Silicon: Aluminum oxide is often deposited on silicon wafers to act as an insulating layer between conductive layers in integrated circuits.
Gallium arsenide (GaAs): This compound semiconductor is often used in high-speed electronic devices, and aluminum oxide is commonly used as a passivation layer to protect the surface of the GaAs from damage.
Sapphire: Sapphire is a material that is often used as a substrate for the growth of gallium nitride (GaN) thin films, which are used in high-power and high-frequency electronic devices. Aluminum oxide is often used as an insulating layer on top of the GaN layer.
Glass: Glass substrates are often used in the manufacturing of flat panel displays and touchscreens, and aluminum oxide is sometimes used as a barrier layer to prevent the diffusion of ions from the glass substrate into the active layers of the device.
Overall, aluminum oxide can be used on a wide range of substrates to provide improved electrical and mechanical properties, as well as increased durability and reliability.
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